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Our selection of industry specific magazines cover a large range of topics.
The secret sauce of silicon carbide wafer success - News
May 30, 2022 · The secret sauce of silicon carbide wafer success - News. Magazine Feature. This article was originally featured in the edition: Volume 28 Issue 4. Nearly all devices we use today depend on semiconductors. New technical advancements and requirements necessitate the use of silicon carbide (SiC) for many demanding semiconductor applications. Due ...
A superior process for the SiC superjunction
Aug 14, 2023 · Rounds of ultra-high-energy implantation and epitaxial growth enable the realisation of devices with a SiC superjunction that block several kilovolts.
Cubic boron arsenide - a perfect semiconductor? - News
Jul 25, 2022 · Cubic boron arsenide - a perfect semiconductor? - News. Researchers have experimentally discovered that a cubic boron arsenide crystal offers high carrier mobility for both electrons and holes – the two ways in which a charge is carried in a semiconducting material – suggesting a major advance for next-generation electronics.
Gearing up for electric vehicles with Soitec’s SmartSiC substrates
Aug 15, 2022 · Gearing up for electric vehicles with Soitec’s SmartSiC substrates. Monday 15th August 2022. Offering a ten-fold reuse of single-crystal SiC and a ten times better conductivity than its conventional counterpart, SmartSiC is poised to revolutionise the production of power electronics for electric vehicles and industrial applications.
Magazine details for - Compound Semiconductor
Our selection of industry specific magazines cover a large range of topics.
Atomera/Sandia project to address GaN/Si challenges
Atomera, a US semiconductor materials and technology licensing company, has announced a project at Sandia National Laboratories (a US Department of Energy, research centre), to address the challenges of growing GaN films on silicon. The project, which is a collaboration with the Centre for Integrated Nanotechnologies (CINT) at Sandia, aims to ...
Stacking GaN and silicon transistors on 300 mm silicon
May 18, 2020 · The I D -V characteristics of Intel’s e-mode high-κ dielectric GaN NMOS transistor on a 300 mm silicon wafer showing a high drive drain current that is approaching 1.5 mA/mm, a low knee voltage (it is below 1 V), and an on-resistance, R ON, of just 610 W-Ωm. Low drain leakage, with I OFF as low as 100 pA/mm at 5 V drain voltage, and ...
Finwave: getting GaN ready for 5G - Compound Semiconductor
Sep 8, 2022 · Finwave: getting GaN ready for 5G. Thursday 8th September 2022. Can a relatively unknown MIT spin-off deliver the fast, cheap GaN finFETs that an entire industry needs? Finwave co-founders, Bin Lu and Tomas Palacios, have teamed up with industry veterans from International Rectifier, Peregrine Semiconductor and Soitec to do just this, reports ...
Vertical integration is shaping the Power SiC ecosystem
May 3, 2022 · The SiC ecosystem has been reshaped by these major players in the past years. According to Yole, two main trends impact its supply chain: vertical integration of wafer manufacturing and module packaging to gain more revenues in the coming years. In this context, end-system companies, for example, automotive OEMs, are adopting SiC quicker and ...